ES2A Datasheet, PDF (1/2 Pages) Jinan Gude Electronic Device – 2.0AMP. SUPER FAST RECOVRY SILICON RECTIFIERS

ES2A THRU ES2J
Features
2.0AMP SURFACE MOUNT GLASS SUPERFAST RECOVERY RECTIFIER
· ^{Low Power Loss, High Efficiency}
· Ideally Suited for Automatic Assembly
· ^{Guard Ring Die Construction}
· Plastic Case Material has UL Flammability
Classification Rating 94V- 0
SMA/DO-214AC
0.059(1.50)
0.051(1.30)
0.110(2.80)
0.094(2.40)
Mechanical Data
· Case: Molded plastic SMA
· Terminals: Plated leads solderable per
MIL-STD-750,Method 2026 guaranteed
· Polarity: Color band dentes cathode end
· Mounting Position: Any
· Making: Type Number
0.086(2.62)
0.079(2.00)
0.060(1.52)
0.030(0.76)
0.181(4.60)
0.157(4.00)
0.010(0.25)
0.004(0.1)
0.208(5.28)
0.188(4.80)
0.012(0.305)
0.006(0.150)
0.008(0.203)
0.002(0.051)
Dimensions in inches and (millimeters)
Maximum Ratings and Electrical Characteristics
Rating at 25℃ ambient temperature unless otherwise specified
Single phase,half wave,60Hz,resistive or inductive load
For capacitive load derate current by 20%
Type Number
SYMBOL ES2A
Maximum Recurrent Peak Reverse Voltage
VRRM
50
Maximum RMS Voltage
VRMS
35
Maximum DC Blocking Voltage
VDC
50
Average Rectified Output Current
@TA =75 ℃
IO
ES2B
100
70
100
ES2D
200
140
200
2.0
ES2G
400
280
400
ES2J
600
420
600
Peak Forward Surge Current 8.3ms Single half
sine-wave superimposed on rated load (JEDEC IFSM
60
Method)
Forward Voltage
@IF=2.0A
Peak Reverse Current @TA =25 ℃
At Rated DC Blocking Voltage @TA =100 ℃
Maximum Reverse Recovery Time (Note 1)
Typical Junction Capacitance (Note 2)
Typical Thermal Resistance Junction to
Ambient(Note 3)
Operating Temperature Range
Storage Temperature Range
VFM
I_R
Trr
CJ
Rθ JA
T_J
TSTG
0.95
5.0
150
35
25
1.25
1.7
34
-55 to+150
-55 to +150
Note: ^{1.Reverse Recovery Test Conditions:IF=0.5A,IR=1.0A,IRR=0.25A.}
2. Measured at 1.0 MHz and Applied reverse Voltage of 4.0V D.C
3. 8.0MM²（.013mm Thick）Land Areas.
Unit
V
V
V
A
A
V
uA
ns
pF
℃/W
℃
℃
version:01
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