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EMB1M Datasheet, PDF (1/3 Pages) DIYI Electronic Technology Co., Ltd. – SINGLE PHASE 0.8AMP SUPER FAST GLASS PASSIVATED BRIDGE RECTIFIER | |||
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EMB1M THRU EMB6M
SINGLE PHASE 0.8AMP SUPER FAST GLASS PASSIVATED BRIDGE RECTIFIER
Features
· Glass Passivated Die Construction
· Low leakage
· Ideal for printed circuit board
· Surge overload rating-30A peak
· Designed for Surface Mount Application
· Plastic Material-UL Flammability 94V-0
Mechanical Data
· Case:Reliable low cost construction
utilizing molded plastic technique
· Terminals:Plated Leads Solderable per MIL-
STD-202,Method208
· Polarity:As Marked on Case
· Mounting Position:Any
· Marking:Type Number
0.051ï¼1.3ï¼
0.035ï¼0.9ï¼
-+
MBM
0.157ï¼4.0ï¼
0.134ï¼3.4ï¼
~~
0.012ï¼0.30ï¼
0.028ï¼ 0.7ï¼
0.016ï¼0.4ï¼
0.236ï¼ 6.0ï¼
0.004ï¼0.10ï¼
0.106ï¼2.7ï¼ 0.213ï¼5.4 ï¼
0.091ï¼2.3ï¼
0.203ï¼5.15ï¼
0.179ï¼4.55ï¼
0.106ï¼2.7ï¼
0.091ï¼2.3ï¼
0.193ï¼4.90ï¼
0.177ï¼4.50ï¼
dimensions in inches and (millimeters)
Maximum Ratings and Electrical Characteristics
Rating at 25â ambient temperature unless otherwise specified.
Single Phase, half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
TYPE NUMBER
SYMBOL
EMB1M
EMB2M
EMB4M EMB6M UNITS
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
RMS Reverse Voltage
VRRM
VRW M
VDC
VRMS
100
200
70
140
400
600
V
280
420
V
Average Rectified Output Current (Note 1)@TC=100â
(Note 2)@TC=100â
IF(AV)
0.5
0.8
A
Non-Repetitive Peak Forward Surge Current 8.3ms
Single half sine-wave superimposed on rated load
IFSM
(JEDEC Method)
I2t Rating for Fusing (t < 8.3ms)
I2t
30
A
3.735
A2s
Forward Voltage per element @IF=0.8A
VFM
Peak Reverse Current
@TA=25â
At Rated DC Blocking Voltage @TA=125â
IR
Maximum reverse recovery time (Note 3)
Typical Junction Capacitance per leg (Note 4)
Typical Thermal Resistance per leg
Operating and Storage Temperature Range
TRR
CJ
RθJA
RθJL
TJ,TSTG
Note:1. Mounted on glass epoxy PC board with 1.3mm2 solder pad.
2. Mounted on aluminum substrate PC board with 1.3mm2 solder pad.
3. Reverse Recovery Test Conditions: IF=0.5A, IR=1A, Irr=0.25A.
4. Measured at 1.0 MHz and applied reverse voltage of 4.0V D.C.
0.95
1.25
5.0
200
35
13
60
16
-55to+150
1.75
V
uA
ns
pF
â/W
â
version:02
1 of 3
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