DYA3407GD Datasheet, PDF (1/4 Pages) DIYI Electronic Technology Co., Ltd. – P -Channel High Density Trench MOSFET

DYA 3407GD
P -Channel High Density Trench MOSFET
●Super high dense cell trench design for low RDS(on).
●Rugged and reliable.
●Surface Mount package.
PRODUCT SUMMARY
VDSS
ID
RDS(on) (mΩ) Max
-30V
- 3.7A
- 3.0A
70 @ VGS = -10V
95 @ VGS = -4.5V
SOT-23
D
S
G
D
G
S
ABSOLUTE MAXIMUM RATINGS (T_C=25°C, unless otherwise specified)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Drain Current-Continuous^a @ TA = 25 °C
-Pulse ^b
Drain-Source Diode Forward Current ^a
Maximum Power Dissipation^{a TA=25°C}
TA=75°C
Operating Junction and Storage
Temperature Range
Symbol
VDS
VGS
ID
IDM
IS
PD
TJ,TSTG
Limit
-30
± 20
-3.7
-14
-1.9
1.25
0.75
- 55 to 150
THERMAL DATA
Thermal Resistance,Junction-to-Ambient^a
RthJA
100
Note
a. Surface Mounted on FR4 Board , t ≤ 10sec .
b. Pulse width limited by maximum junction temperature.
Unit
V
V
A
A
A
W
°C
°C/W
version:01
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