DMT80N85 Datasheet, PDF (1/7 Pages) DIYI Electronic Technology Co., Ltd. – 85V N-Channel Power MOSFET

DMT80N85
85V N-Channel Power MOSFET
● RDS(ON)<8.5mΩ @ VGS=10V
● High density cell design for ultra low Rdson
● Fully characterized avalanche voltage and current
● Special designed for convertors and power controls
● ^{Good stability and uniformity with high EAS}
● _{Excellent package for good heat dissipation}
● Green molding compound
Application
● Power switching application
● Hard switched and High frequency circuits
● Uninterruptible power supply
● Case: TO-220 Package
PRODUCT SUMMARY
V_DS (V)
R_DS(on)(mΩ)
85
8.5 @ V_GS =10V
Block Diagram
D
I_D (A)
80
Pin Definition:
1. Gate
2. Drain
3. Source
Ordering Information
Part No.
DMT80N85-TU
Package
TO-220
Packing
50pcs / Tube
G
S
Absolute Maximum Ratings (TA=25℃unless otherwise noted)
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Drain Current-Continuous
Drain Current-Continuous(T_C=100℃)
I_D
I_D (100℃)
Pulsed Drain Current
Maximum Power Dissipation
Peak diode recovery voltage
I_DM
P_D
dv/dt
Derating factor
Single pulse avalanche energy (Note 5)
Operating Junction and Storage Temperature Range
E_AS
T_J,T_STG
Limit
85
±20
80
60
320
170
15
1.13
620
-55 To 175
Unit
V
V
A
A
A
W
V/ns
W/℃
mJ
℃
May.2015-REV.00
www.dyelec.com
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