8N65 Datasheet, PDF (1/9 Pages) Unisonic Technologies – 8A, 650V N-CHANNEL POWER MOSFET

8N65
650V N-Channel Power MOSFET
● RDS(ON)<1.4Ω @ VGS=10V
● Fast switching capability
● Low gate charge
● Lead free in compliance with EU RoHS directive.
● _{Green molding compound}
PRODUCT SUMMARY
V_DS (V)
R_DS(on)(Ω)
650
1.4 @ V_GS =10V
● Case: TO-220,ITO-220,TO-262,TO-263 Package
I_D (A)
8
Pin Definition:
1. Gate
2. Drain
3. Source
Ordering Information
Part No.
DMT8N65-TU
DMF8N65-TU
DMK8N65-TU
DMG8N65-TU
DMG8N65-TR
Package
TO-220
ITO-220
TO-262
TO-263
TO-263
Packing
50pcs / Tube
50pcs / Tube
50pcs / Tube
50pcs / Tube
800pcs / 13" Reel
Block Diagram
D
G
ABSOLUTE MAXIMUM RATINGS (T_C=25°C, unless otherwise specified)
PARAMETER
SYMBOL
RATINGS
Drain-Source Voltage
V_DSS
650
Gate-Source Voltage
V_GSS
±30
Avalanche Current (Note 2)
Continuous Drain Current
I_AR
8
I_D
8
Pulsed Drain Current (Note 2)
I_DM
32
Avalanche Energy
Single Pulsed (Note 3)
E_AS
230
Peak Diode Recovery dv/dt (Note 4)
dv/dt
4.5
TO-220/TO-262/TO-263
142
Power Dissipation
P_D
ITO-220
48
S
UNIT
V
V
A
A
A
mJ
ns
W
W
Junction Temperature
Operating Temperature
Storage Temperature
T_J
+150
°C
T_OPR
-55 ~ +150
°C
T_STG
-55 ~ +150
°C
Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. Repetitive Rating : Pulse width limited by T_J
3. L = 7.1mH, I_AS = 8A, V_DD = 50V, R_G = 25 Ω, Starting T_J = 25°C
4. I_SD ≤ 7.5A, di/dt ≤200A/μs, V_DD ≤ BV_DSS, Starting T_J = 25°C
May.2015-REV.00
www.dyelec.com
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