6N60 Datasheet, PDF (1/8 Pages) Unisonic Technologies – 6.2 Amps, 600/650 Volts N-CHANNEL MOSFET

● RDS(ON)<1.5Ω @ VGS=10V
● _{Fast switching capability}
● Low gate charge
● Lead free in compliance with EU RoHS directive.
● Green molding compound
6N60
600V N-Channel Power MOSFET
PRODUCT SUMMARY
V_DS (V)
Current(A)
600
6
R_DS(on)(Ω)
1.5 @ V_GS =10V
● Case: TO-220,ITO-220,TO-262,TO-263 Package
Pin Definition:
1. Gate
2. Drain
3. Source
Ordering Information
Part No.
DMT6N60-TU
DMF6N60-TU
DMK6N60-TU
DMG6N60-TU
DMG6N60-TR
Package
TO-220
ITO-220
TO-262
TO-263
TO-263
Packing
50pcs / Tube
50pcs / Tube
50pcs / Tube
50pcs / Tube
800pcs / 13" Reel
Block Diagram
D
G
S
ABSOLUTE MAXIMUM RATINGS (T_C=25°C, unless otherwise specified)
PARAMETER
SYMBOL
RATINGS
Drain-Source Voltage
V_DSS
600
Gate-Source Voltage
V_GSS
±30
Avalanche Current (Note 2)
Continuous Drain Current
I_AR
6
I_D
6
Pulsed Drain Current (Note 2)
I_DM
Avalanche Energy
Single Pulsed (Note 3)
E_AS
24.8
440
Peak Diode Recovery dv/dt (Note 4)
dv/dt
4.5
TO-220/TO-262/TO-263
125
UNIT
V
V
A
A
A
mJ
ns
W
Power Dissipation
ITO-220
P_D
42
W
TO-251/TO-252
55
W
Junction Temperature
T_J
+150
°C
Operating Temperature
Storage Temperature
T_OPR
-55 ~ +150
°C
T_STG
-55 ~ +150
°C
Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. Repetitive Rating : Pulse width limited by T_J
3. L = 25mH, I_AS = 6A, V_DD = 90V, R_G = 25 Ω, Starting T_J = 25°C
4. I_SD ≤ 6.2A, di/dt ≤200A/μs, V_DD ≤ BV_DSS, Starting T_J = 25°C
May.2015-REV.00
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