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5N65 Datasheet, PDF (1/9 Pages) Unisonic Technologies – 5A, 650V N-CHANNEL POWER MOSFET
● RDS(ON) < 2.4Ω @ VGS =10V, ID = 2.5A
● Fast switching capability
● Lead free in compliance with EU RoHS directive.
● Green molding compound
5N65
650V N-Channel Power MOSFET
PRODUCT SUMMARY
VDS (V)
RDS(on)(Ω)
650
2.4 @ VGS =10V
ID (A)
5
● Case: TO-251,TO-252,TO-220,ITO-220,
TO-262,TO-263 Package
Ordering Information
Part No.
DMP5N65-TU
DMD5N65-TR
DMD5N65-TU
DMT5N65-TU
DMF5N65-TU
DMK5N65-TU
DMG5N65-TU
DMG5N65-TR
Package
TO-251
TO-252
TO-252
TO-220
ITO-220
TO-262
TO-263
TO-263
Packing
75pcs / Tube
2.5Kpcs / 13” Reel
75pcs / Tube
50pcs / Tube
50pcs / Tube
50pcs / Tube
50pcs / Tube
800pcs / 13" Reel
Pin Definition:
1. Gate
2. Drain
3. Source
Block Diagram
D
G
S
ABSOLUTE MAXIMUM RATINGS (TC=25°C, unless otherwise specified)
PARAMETER
SYMBOL
RATINGS
Drain-Source Voltage
VDSS
650
Gate-Source Voltage
VGSS
±30
Avalanche Current (Note 2)
Continuous Drain Current
IAR
5
ID
5
Pulsed Drain Current (Note 2)
IDM
20
Avalanche Energy
Single Pulsed (Note 3)
EAS
210
Peak Diode Recovery dv/dt (Note 4)
dv/dt
4.5
TO-220,TO-262,TO-263
100
UNIT
V
V
A
A
A
mJ
V/ns
W
Power Dissipation
ITO-220
PD
36
W
TO-251/TO-252
54
W
Junction Temperature
Operating Temperature
Storage Temperature
TJ
+150
°C
TOPR
-55 ~ +150
°C
TSTG
-55 ~ +150
°C
Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. Repetitive Rating : Pulse width limited by maximum junction temperature
3. L = 16.8mH, IAS = 5A, VDD = 50V, RG = 25 Ω, Starting TJ = 25°C
4. ISD≤5A, di/dt ≤200A/μs, VDD≤BVDSS, Starting TJ = 25°C
Mar.2015-REV.00
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