4N65 Datasheet, PDF (1/10 Pages) Unisonic Technologies – 4 Amps, 650 Volts N-CHANNEL POWER MOSFET

● RDS(ON)<2.4Ω @ VGS=10V
● Fast switching capability
● _{Lead free in compliance with EU RoHS directive.}
● _{Green molding compound}
4N65
650V N-Channel Power MOSFET
PRODUCT SUMMARY
V_DS (V)
R_DS(on)(Ω)
650
2.4 @ V_GS =10V
I_D (A)
4
● Case: TO-251,TO-252,TO-220,ITO-220
TO-262,TO-263 Package
Ordering Information
Part No.
DMP4N65-TU
DMD4N65-TR
DMD4N65-TU
DMT4N65-TU
DMF4N65-TU
DMK4N65-TU
DMG4N65-TU
DMG4N65-TR
Package
TO-251
TO-252
TO-252
TO-220
ITO-220
TO-262
TO-263
TO-263
Packing
75pcs / Tube
2.5Kpcs / 13” Reel
75pcs / Tube
50pcs / Tube
50pcs / Tube
50pcs / Tube
50pcs / Tube
800pcs / 13" Reel
Pin Definition:
1. Gate
2. Drain
3. Source
Block Diagram
D
G
S
ABSOLUTE MAXIMUM RATINGS (T_C=25°C, unless otherwise specified)
PARAMETER
SYMBOL
RATINGS
Drain-Source Voltage
Gate-Source Voltage
V_DSS
650
V_GSS
±30
Continuous Drain Current
I_D
4.0
Pulsed Drain Current (Note 2)
I_DM
16
Avalanche Energy
Single Pulsed (Note 3)
E_AS
260
UNIT
V
V
A
A
mJ
TO-220/TO-262/TO-263
106
W
Power Dissipation
ITO-220
P_D
35
W
TO-251/TO-252
50
W
Junction Temperature
Operating Temperature
Storage Temperature
T_J
+150
°C
T_OPR
-55 ~ +150
°C
T_STG
-55 ~ +150
°C
Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. Repetitive Rating : Pulse width limited by maximum junction temperature
3. L = 30mH, I_AS = 3.6A, V_DD = 50V, R_G = 25 Ω, Starting T_J = 25°C
May,2015-REV.00
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