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4N60 Datasheet, PDF (1/10 Pages) Unisonic Technologies – 4 Amps, 600 Volts N-CHANNEL POWER MOSFET
● RDS(ON)<2.4Ω @ VGS=10V
● Fast switching capability
● Lead free in compliance with EU RoHS directive.
● Green molding compound
4N60
600V N-Channel Power MOSFET
PRODUCT SUMMARY
VDS (V)
RDS(on)(Ω)
600
2.4 @ VGS =10V
ID (A)
4
● Case: TO-251,TO-252,TO-220,ITO-220
TO-262,TO-263 Package
Ordering Information
Part No.
DMP4N60-TU
DMD4N60-TR
DMD4N60-TU
DMT4N60-TU
DMF4N60-TU
DMK4N60-TU
DMG4N60-TU
DMG4N60-TR
Package
TO-251
TO-252
TO-252
TO-220
ITO-220
TO-262
TO-263
TO-263
Packing
75pcs / Tube
2.5Kpcs / 13" Reel
75pcs / Tube
50pcs / Tube
50pcs / Tube
50pcs / Tube
50pcs / Tube
800pcs / 13" Reel
Pin Definition:
1. Gate
2. Drain
3. Source
Block Diagram
D
G
S
ABSOLUTE MAXIMUM RATINGS (TC=25°C, unless otherwise specified)
PARAMETER
SYMBOL
RATINGS
Drain-Source Voltage
Gate-Source Voltage
VDSS
600
VGSS
±30
Continuous Drain Current
ID
4.0
Pulsed Drain Current (Note 2)
IDM
16
Avalanche Energy
Single Pulsed (Note 3)
EAS
217
UNIT
V
V
A
A
mJ
TO-220/TO-262/TO-263
106
W
Power Dissipation
ITO-220
PD
44
W
TO-251/TO-252
77
W
Junction Temperature
Operating Temperature
Storage Temperature
TJ
+150
°C
TOPR
-55 ~ +150
°C
TSTG
-55 ~ +150
°C
Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. Repetitive Rating : Pulse width limited by maximum junction temperature
3. L = 30mH, IAS = 3.7A, VDD = 50V, RG = 25 Ω, Starting TJ = 25°C
May.2015-REV.00
www.dyelec.com
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