1N4148W Datasheet, PDF (1/2 Pages) Pan Jit International Inc. – SURFACE MOUNT SWITCHING DIODES

FEATURES
1N4148W/1N4448W/1N914BW
400mW High Speed SMD Switching Diode
- Fast switching device (trr<4.0ns)
- Surface Mount Device Type
- Moisture sensitivity level 1
- Matte Tin (Sn) lead finish with Nickel (Ni) underplate
0.079(2.0)
0.063(1.6)
SOD-123FL
8°(8°)
2°(2°)
MECHANICAL DATA
- Case: Flat lead SOD-123FL small outline plastic package
- Terminal: Matte tin plated, lead free,
solderable per MIL-STD-202, Method 208 guaranteed
- High temperature soldering guaranteed: 260°C/10s
- Polarity: Indicated by cathode band
0.150(3.8)
0.134(3.4)
0.047(1.2)
0.032(0.8)
0.037(0.95)
0.022(0.55)
Dimensions in inches and (millimeters)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
(T_A=25℃ unless otherwise noted)
PARAMETER
Power Dissipation
Reverse Voltage
Repetitive Peak Reverse Voltage
Repetitive Peak Forward Current
Non-Repetitive Peak Forward Surge Current @ t=1.0μs
Forward Current
Thermal Resistance (Junction to Ambient) (Note 1)
Junction and Storage Temperature Range
SYMBOL
P_D
V_R
V_RRM
I_FRM
I_FSM
I_F
R_θJA
T_J , T_STG
VALUE
400
100
75
300
2
150
450
-65 to +150
PARAMETER
SYMBOL
MIN
Reverse Voltage
Forward Voltage
I_R=100μA
I_R=5μA
V_R
100
75
1N4448W, 1N914BW
1N4148W
I_F=5.0mA
I_F=10.0mA
V_F
0.62
-
1N4448W, 1N914BW ^IF^=100.0mA
-
Reverse Leakage Current
V_R=20V
V_R=75V
I_R
-
-
Junction Capacitance
V_R=0, f=1.0MHz
C_J
-
Reverse Recovery Time
(Note 2)
t_rr
-
Notes 1: Test Condition : 8.3ms Single half Sine-Wave Superimposed on Rated Load
Notes 2: Reverse Recovery Test Conditions : I_F=10mA, I_R=60mA, R_L=100Ω, I_RR=1mA
MAX
-
-
0.72
1.0
1.0
25
5.0
4.0
4.0
UNIT
mW
V
V
mA
A
mA
o_C/W
o_C
UNIT
V
V
nA
μA
pF
ns
version:01
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