1N4001G Datasheet, PDF (1/2 Pages) NXP Semiconductors – Rectifiers(Rugged glass package, using a high temperature alloyed construction)

1N 4 001G THRU 1N 4 007 G
1.0 AMP. Glass Passivated Rectifiers
Features
· Low forward voltage drop
· High current capability
· High reliability
· High surge current capability
· Plastic material-UL flammability 94V-0
Mechanical Data
· Case: Molded plastic DO-41
· Terminals: Plated leads solderable per
MIL-STD-202,Method 208 guaranteed
· Polarity: Color band dentes cathode end
· Mounting Position: Any
· Making: Type Number
· Lead Free: For RoHS/Lead Free Version
Maximum Ratings and Electrical Characteristics
Rating at 25℃ ambient temperature unless otherwise specified
Single phase,half wave,60Hz,resistive or inductive load
For capacitive load derate current by 20%
DO-41
˄˅
DIA.
˄˅
˄˅
MIN.
˄˅
MAX
DIA. ^{˄Ë}
˄˅
˄˅
MIN.
Dimensions in inches and (millimeters)
Type Number
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
Average Rectified Output Current (Note 1)
@T_A =75 ℃
SYMBOL ^1N
1N
4001G 4002G
1N
4003G
1N
4004G
1N
4005G
1N
4006G
1N
4007G
Unit
VRRM
50
100 200 400 600 800 1000 V
VRMS
35
70
140 280 420 560 700 V
VDC
50 100 200 400 600 800 1000 V
IO
1.0
A
Peak Forward Surge Current 8.3ms Single half
sine-wave superimposed on rated load (JEDEC IFSM
Method)
30
A
Forward Voltage @IF=1.0A
VFM
Peak Reverse Current @TA=25℃
IR
At Rated DC Blocking Voltage @TA=100℃
Typical Junction Capacitance (Note 2)
C_J
Typical Thermal Resistance Junction to
Ambient(Note 1)
RθJA
Operating Temperature Range
T_J
Storage Temperature Range
TSTG
1.1
5.0
100
15
50
-55 to +150
-55 to +150
V
uA
pF
℃/W
℃
℃
Note: 1. Leads maintained at ambient temperature at a distance of 9.5mm from the case
2. Measured at 1.0 MHz and Applied reverse Voltage of 4.0V D.C
version:01
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