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1E1G Datasheet, PDF (1/2 Pages) Diode Semiconductor Korea – ULTRA FAST RECTIFIERS
1E1G THRU 1E8G
1.0 AMP. G lass Super Fast Rectifiers
Features
· Low forward voltage drop
· High current capability
· High reliability
· High surge current capability
· Plastic material-UL flammability 94V-0
Mechanical Data
R-1
˄˅
MIN.
· Case: Molded plastic R-1
· Terminals: Plated leads solderable per
MIL-STD-202,Method 208 guaranteed
· Polarity: Color band dentes cathode end
· Mounting Position: Any
· Making: Type Number
· Lead Free: For RoHS/Lead Free Version
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DIA.
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DIA.
˄˅
MIN.
Dimensions in inches and (millimeters)
Maximum Ratings and Electrical Characteristics
Rating at 25℃ ambient temperature unless otherwise specified
Single phase,half wave,60Hz,resistive or inductive load
For capacitive load derate current by 20%
Type Number
SYMBOL 1E1G 1E2G 1E3G 1E4G 1E5G 1E6G 1E8G Unit
Maximum Recurrent Peak Reverse Voltage
VRRM
50 100 150 200 300 400 600 V
Maximum RMS Voltage
VRMS 35 70 105 140 210 280 420 V
Maximum DC Blocking Voltage
VDC
50 100 150 200 300 400 600 V
Average Rectified Output Current (Note 1)
@TA =55 ℃
IO
1.0
A
Peak Forward Surge Current 8.3ms Single half
sine-wave superimposed on rated load (JEDEC IFSM
Method)
Forward Voltage @IF=1.0A
Peak Reverse Current @TA =25℃
At Rated DC Blocking Voltage @TA =125℃
Maximum Reverse Recovery Time (Note2 )
Typical Junction Capacitance (Note 3)
Typical Thermal Resistance Junction to
Ambient(Note 1)
Operating Temperature Range
Storage Temperature Range
VFM
IR
TRR
CJ
RθJA
TJ
TSTG
25
A
0.95
1.25
5.0
100
35
30
25
40
-55 to + 150
-55 to + 150
1.7 V
uA
nS
pF
℃/W
℃
℃
Note: 1. Leads maintained at ambient temperature at a distance of 9.5mm from the case
2. Reverse Recovery Test Conditions: IF=0.5A, IR=1A, Irr=0.25A.
3. Measured at 1.0 MHz and Applied reverse Voltage of 4.0V D.C
version:01
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