15N10 Datasheet, PDF (1/8 Pages) Unisonic Technologies – 14.7A, 100V (D-S) N-CHANNEL POWER MOSFET

15N10
100V N-Channel Power MOSFET
● ^{RDS(ON)<110mΩ @ VGS=10V}
● ^{Advanced high cell density Trench technology}
● Super Low Gate Charge
● Excellent CdV/dt effect decline
● Lead free in compliance with EU RoHS directive.
● Green molding compound
● Case: TO-252
PRODUCT SUMMARY
V_DS (V)
R_DS(on)(mΩ)
100
110@ V_GS =10V
I_D (A)
15
Pin Definition:
1. Gate
2. Drain
3. Source
Ordering Information
Part No.
DMD15N10-TR
DMD15N10-TU
Package
TO-252
TO-252
Packing
2.5Kpcs / 13” Reel
75pcs / Tube
Block Diagram
D
G
S
ABSOLUTE MAXIMUM RATINGS (T_C=25°C, unless otherwise specified)
Parameter
Symbol
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current¹
Continuous Drain Current¹
Pulsed Drain Current²
Total Power Dissipation⁴
Total Power Dissipation
Single Pulse Avalanche Energy³
V_DS
V_GS
I_D @TC=25℃
I_D @TC=70℃
I_DM
P_D @TC=25℃
P_D @TA=25℃
EAS
Avalanche Current
IAS
Operating Junction and Storage Temperature Range Tj, Tstg
Ratings
100
±20
15.0
13.8
24
34.7
2
8
11
-55 ~ +150
Unit
V
V
A
A
A
W
W
mJ
A
℃
THERMAL DATA
Parameter
Thermal Resistance Junction-ambient¹
Thermal Resistance Junction-case¹
Symbol
R_θJA
R_θJC
Max. Value
62.5
3.6
Unit
℃/W
℃/W
May,2015-REV.00
www.dyelec.com
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