ES07B Datasheet, PDF (3/3 Pages) General Semiconductor – Small Surface Mount Ultrafast Rectifiers

Diode Semiconductor Korea
ES07B --- ES07D
FIG.1 --TYPICAL FORWARD CHARACTERISTIC
100
10 _TJ=25
Pulse Width=300us
4
2
1.0
0.4
0.2
0.1
0.06
0.04
0.02
0.01
0.6 0.8 1.0 1.2 1.4 1.6
INSTANTANEOUS FORWARD VOLTAGE,VOLTS
FIG.2 -- TYPICAL JUNCTION CAPACITANCE
10
9
8
7
6
5
4
3
2
1
0
0
5 10 15 20 25 30 35 40
REVERSE VOLTAGE,VOLTS
FIG.3 -- TYPICAL INSTANTANEOUS
REVERSE CHARACTERISTICS
100
TJ = 150°C
10
TJ = 125°C
TJ = 100°C
1
TJ = 75°C
TJ = 50°C
0.1
0.01
0
TJ = 25°C
100 200 300 400 500 600 700 800 900
INSTANTANEOUS REVERSE VOLTAGE,VOLTS
FIG.4 -- FORWARD DERATING CURVE
1.2
Resistive or Inductive Load
1.0
0.8
0.6
0.4
0.2
3.0 x 3.0mm 40 µm
Thick Copper Pad Areas
0
0 20 40 60 80 100 120 140 160
AMBIENT TEMPERATURE,
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