USF21 Datasheet, PDF (2/2 Pages) Galaxy Semi-Conductor Holdings Limited – SUPER FAST RECTIFIER

Diode Semiconductor Korea
USF21 --- USF24
FIG.1 -- TEST CIRCUIT DIAGRAM AND REVERSE RECOVERY TIME CHARACTERISTIC
50
10
N 1.
N 1.
trr
+0.5A
(+)
25VDC
(approx)
(-)
D.U.T.
1
NONIN-
DUCTIVE
OSCILLOSCOPE
(NOTE 1)
PULSE
GENERATOR
(NOTE2)
NOTES:1.RISE TIME = 7ns MAX.INPUT IMPEDANCE = 1M .22pF.
JJJJJ2.RISE TIME =10ns MAX.SOURCE IMPEDANCE=50 .
0
-0.25A
-1.0A
1cm
SET TIME BASE FOR 10/20 ns/cm
FIG.2 -- TYPICAL FORWARD CHARACTERISTIC
100
40
20
10
TJ=25
P u ls e W id th = 3 0 0 µ s
4.0
2.0
1.0
0.4
0.2
0.1
0.04
0.02
0.01
0 0 .2 0 .4 0 .6 0 .8 1 .0 1 .2 1 .4
INSTANTANEOUS FORWARD VOLTAGE, VOLTS
FIG.3 -- FORWARD DERATING CURVE z
3
2
1 Single Phase
Half W ave 60HZ
R esistive or
Inductive Load
0.375"(9.5m m )Lead Length
0
0 25 50 75 100
125
150 175
AMBIENT TEMPERATURE,
FIG.4 -- TYPICAL JUNCTION CAPACITANCE
100
60
40
20
10
6
4
2
10.1 _{0.2 0.4 1 2}
TJ=25
f=1.0MHZ
4 10 20 40 100
REVERSE VOLTAGE,VOLTS
FIG.6 -- TYPICAL REVERSE CHARACTERISTICS
100
T J= 1 5 0
10
1
T J=100
FIG.5 -- PEAK FORWARD SURGE CURRENT
90
8.3ms Single Half
Sine-Wave
75
60
45
30
15
0
1
5 10
50 100
NUMBER OF CYCLES AT 60Hz
.1
T J=25
.0 1
0 20 40 60 80 100 120 140
PERCENT OF RATED PEAK REVERSE VOLTAGE,
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