US1A Datasheet, PDF (2/2 Pages) Pan Jit International Inc. – SURFACE MOUNT ULTRAFAST RECTIFIER(VOLTAGE - 50 to 800 Volts CURRENT - 1.0 Ampere)

Diode Semiconductor Korea
US1A - - - US1M
FIG.1 -- FORWARD CURRENT DERATING CURVE
1 .5
1 .0
R E SIS TIV E O R IN D U C T IVE
LOAD
0 .8
0 .6
0 .4
0 .2
0
0
0.2X 0.2"(5.0X 5.0m m )
COPPER PAD
AREAS
25 50 75 100 125 150
LEAD TEMPERATURE
FIG.3 -- TYPICAL INSTANTANEOUS FORWARD
CHARACTERISTICS
10
US1A-US1G
1
US1J-US1M
0.1
0.01
PULSE WIDTH=300
s1%DUTY CYCLE TJ
0.001
=25
0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8
INSTANTANEOUS FORWARD VOLTAGE(V)
FIG.5 -- TYPICAL JUNCTION CAPACITANCE
100
60
40
20
10
6
US1J--US1M
4
TJ=25
2
f=1MHz
US1A--US1G
1
0.1 0.2 0.4 1 2 4 10 20 40 100
REVERSE VOLTAGE(V)
FIG.2 -- MAXIMUM NON-REPETITIVE PEAK FORWARD
SURGE CURRENT
30
TL=110
25
8.3ms SINGLE HALF SINE-WAVE
(JEDEC METHOD)
20
15
10
5
0
1
10
100
NUMBER OF CYCLES AT 60HZ
FIG.4 -- TYPICAL REVERSE CHARACTERISTICS
100
TJ=125
10
125
100
1
25
0.1
0.01
0
20 40 60 80 100
PERCENT OF RATED PEAK REVERSE VOLTAGE. ( )
FIG.6 -- TYPICAL TRANSIENT THERMAL IMPEDANCE
100
10
1
0.1
0.01
0.1
1
10
100
T,PULSE DURATION,
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