SF11L Datasheet, PDF (2/2 Pages) Galaxy Semi-Conductor Holdings Limited – SUPER FAST RECTIFIER

Diode Semiconductor Korea
SF11L --- SF16L
FIG.1 -- TEST CIRCUIT DIAGRAM AND REVERSE RECOVERY TIME CHARACTERISTIC
50
10
N 1.
N 1.
(+)
25VDC
(approx)
(-)
D.U.T.
1
NONIN-
DUCTIVE
OSCILLOSCOPE
(NOTE 1)
PULSE
GENERATOR
(NOTE2)
NOTES:1.RISE TIME = 7ns MAX.INPUT IMPEDANCE = 1M .22pF.
JJJJJ2.RISE TIME =10ns MAX.SOURCE IMPEDANCE=50 .
trr
+0.5A
0
-0.25A
-1.0A
1cm
SET TIME BASE FOR 10 ns/cm
FIG.2 -- TYPICAL FORWARD CHARACTERISTIC
10
4.0
2.0
SF11L - SF14L
1.0
SF15L - SF16L
0.4
0.2
0.1
0.04
0.02
0.01
0
TJ=25
Pulse Width=300µs
0.4 0.8 1.2 1.6 2.0 2.4
INSTANTANEOUS FORWARD VOLTAGE, VOLTS
FIG.4 -- TYPICAL JUNCTION CAPACITANCE
40
20
SF11L - SF14L
10
4.0
SF15L - SF16L
2.0
1.0
0.4
0.2
0.10.1 _{0.2 0.4}
TJ=25
f=1.0MHZ
1 24
10 20
40 100
REVERSE VOLTAGE,VOLTS
FIG.3 -- FORWARD DERATING CURVE z
2.0
Single Phase
Half Wave 60HZ
Resistive or
Inductive Load
0.375"(9.5mm)Lead Length
1.0
0
0 25 50 75 100 125 150 175
AMBIENT TEMPERATURE,
FIG.5 -- PEAK FORWARD SURGE CURRENT
40
30
25
8.3ms Single Half
Sine-Wave
20
15
10
5
0
1
5
10
50 100
NUMBER OF CYCLES AT 60Hz
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