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| SD106WS Datasheet, PDF (2/3 Pages) General Semiconductor – SCHOTTKY DIODES | |||
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Diode Semiconductor Korea
Silicon Epitaxial Planar Diode
SD106WS
Parameter
Symbol Min. Typ. Max. Unit Conditions
Reverse breakdown voltage
VR
30
V
IR=100μA
260
IF=2mA
Forward voltage
320
IF=15mA
VF
mV
420
IF=100mA
Reverse current
IR
Capacitance between terminals
CT
490 550
5
μA
15 pF
IF=200mA
VR=30V
VR=10V,f=1MHz
TYPICAL CHARACTERISTICS @ Ta=25â unless otherwise specified
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