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| SD103AWS Datasheet, PDF (2/3 Pages) Pan Jit International Inc. – SURFACE MOUNT SCHOTTKY BARRIER | |||
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Diode Semiconductor Korea
Schottky Barrier Diode SD103AWS/SD103BWS/SD103CWS
Parameter
Reverse Breakdown Voltage SD103AWS
SD103BWS
SD103CWS
Symbol
V(BR)R
Min.
40
30
20
Typ.
Forward voltage
VF
Reverse current
SD103AWS
SD103BWS IRM
SD103CWS
Junction Capacitance
CJ
50
Reverse Recovery Time
trr
10
Max. Unit
V
0.37
V
0.60
5.0 μA
pF
ns
Conditions
IR=10μA
IR=10μA
IR=10μA
IF=20mA
IF=200mA
VR=30V
VR=20V
VR=10V
VR=0,f=1MHz
IR=IF=200mA
Irr=0.1*IR,RL=100â¦
TYPICAL CHARACTERISTICS @ Ta=25â unless otherwise specified
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