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| S9014W Datasheet, PDF (2/4 Pages) Galaxy Semi-Conductor Holdings Limited – Silicon Epitaxial Planar Transistor | |||
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Diode Semiconductor Korea
Silicon Epitaxial Planar Transistor
S9014W
ELECTRICAL CHARACTERISTICS @ Ta=25â unless otherwise specified
Parameter
Symbol Test conditions
MIN TYP MAX UNIT
Collector-base breakdown voltage V(BR)CBO IC=100μA,IE=0
50
V
Collector-emitter breakdown voltage V(BR)CEO IC=0.1mA,IB=0
45
V
Emitter-base breakdown voltage
V(BR)EBO IE=-100μA,IC=0
5
V
Collector cut-off current
ICBO
VCB=50V,IE=0
0.1 μA
Collector cut-off current
ICEO
VCE=35V,IB=0
0.1 μA
Emitter cut-off current
IEBO
VEB=3V,IC=0
DC current gain
hFE
VCE=5V,IC=1mA
200
Collector-emitter saturation voltage VCE(sat) IC=100mA, IB= 5mA
0.1 μA
1000
0.3 V
Base-emitter saturation voltage
VBE(sat)
IC=100mA, IB= 5mA
1
V
Transition frequency
VCE=6V, IC= 20mA
fT
f=30MHz
150
MHz
CLASSIFICATION OF hFE(1)
Rank
L
Range
200-450
H
450-1000
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