RS3AB Datasheet, PDF (2/2 Pages) Galaxy Semi-Conductor Holdings Limited – SURFACE MOUNT RECTIFIER

Diode Semiconductor Korea
RS3AB - - - RS3MB
FIG.1 -- FORWARD DERATING CURVE
3.0
Resistive or inductive Load
2.0
1.0
P.C.B.MOUNTED ON
0.27''X0.27''(7.0X7.0mm)
COPPERPAND AREAS
0
50 60 70 80 90 100 110 120 130 140 150 160
LEAD TEMPERATURE
FIG.3 -- TYPICAL FORWARD CHARACTERISTICS
20
10
1
0.1
TJ=25 ^OC
Puise Width=300 S
1%DUTY CYCLE
0.01
0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8
INSTANTANEOUS FORWARD VOLTAGE,VOLTS
FIG.2 PEAK FORWARD SURGE CURRENT
100
TL=100^OC
8.3ms Single Half Sine-Wave
(JEDEC Method)
80
60
40
20
0
1
10
1 00
NUMBER OF CYCLES AT 60Hz
FIG.4 -- TYPICAL REVERSE CHARACTERISTICS
100
TJ=125⁰C
10
1
0.1
0
TJ=25⁰C
20
40
60
80
100
PERCENT OF RATED PEAK REVERSE VOLTAGE,
FIG.5-TYPICAL JUNCTION CAPACITANCE
100
TJ=25 ⁰C
f=1.0MHZ
60
Vsig=50mVp-p
40
30
20
10
.1
1
4
1000
REVERSE VOLTAGE,VOLTS
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