RGP20AZ Datasheet, PDF (2/2 Pages) Diode Semiconductor Korea – FAST RECOVERY RECTIFIERS

Diode Semiconductor Korea
RGP20A(Z)-- -RGP20J(Z)
FIG.1 --REVERSE RECOVERY TIME CHARACTERISTIC AND TEST CIRCUIT DIAGRAM
50
10
N.1.
N.1.
trr
+0.5A
(+)
50VDC
(APPROX)
(-)
D.U.T.
1
N.1.
OSCILLOSCOPE
(NOTE 1)
(-)
PULSE
GENERATOR
(NOTE2)
(+)
0
-0.25A
-1.0A
1cm
NOTES:1.RESETIME=7ns MAX.INPUTIMPEDANCE=1MΩ.22pF.
2.RESETIME=10ns MAX.SOURCEIMPEDANCE=500Ω.
FIG.2 --PEAK FORWARD SURGE VURRENT
SETTIMEBASEFOR50/100 ns /cm
FIG.3--TYPICAL JUNCTION CAPACITANCE
180
100
80
60
40
20
0
1
TJ=125
8.3ms Single Half
Sine-Wave
10
100
NUMBER OF CYCLES AT 60Hz
FIG.4--TYPICAL FORWARD CHARACTERISTICS
100
10
TJ=25
Pulse Width=300µS
1.0
0.1
0.04
0.01
0 _{0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 2}
FORWARD VOLTAGE,VOLTS
100
60
40
20
10
4
TJ=25
f=1MHz
2
1
.1 .2 .4
1.0
24
10 2 0 40
100
REVERSE VOLTAGE,VOLTS
FIG.5--FORWARD CURRENT DERATING CURVE
2.0
1.50
1.00
Single Phase
Half Wave 60Hz
0 . 5 0 Resistiveor
Inductive Load
0
0
25 50
75 100 125 150 175
AMBIENT TEMPERATURE,
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