RGP15AZ Datasheet, PDF (2/2 Pages) Diode Semiconductor Korea – FAST RECOVERY RECTIFIERS

Diode Semiconductor Korea
RGP15A(Z) - - - RGP15M(Z)
FIG.1 -- FORWARD DERATING CURVE
1.50
1.25
1.00
0.75
0.50
Single Phase
Half Wave 60HZ
0.25 Resistive or
Inductive Load
0
0 25 50
75 100 125 150 175
AMBIENT TEMPERATURE,
FIG.3 --TYPICAL FORWARD CHARACTERISTICS
FIG.2 --PEAK FORWARD SURGE CURRENT
50
TJ=125
40
8.3ms Single Half
Sine-Wave
(JEDEC METHOD)
30
20
10
0
1
10
100
NUMBER OF CYCLES AT 60Hz
FIG.4--TYPICAL JUNCTION CAPACITANCE
100
10
TJ=25
Pulse Width=300µS
4
2
1.0
0.4
0.2
0.1
0.06
0.04
0.02
0.01
0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0
200
100
60
40
20
10
TJ=25
6
f=1.0MHZ
4
2
1
.1 .2 .4 1.0 2 4 10 20 40 100
INSTANTANEOUS FORWARD VOLTAGE,VOLTS
REVERSE VOLTAGE,VOLTS
FIG.5--REVERSE RECOVERY TIME CHARACTERISTIC AND TEST CIRCUIT DIAGRAM
50
10
N.1.
N.1.
trr
1cm
+0.5A
(+)
50VDC
(APPROX)
(-)
D.U.T.
1
N.1.
OSCILLOSCOPE
(NOTE 1)
(-)
PULSE
GENERATOR
(NOTE2)
(+)
0
-0.25A
NOTES: 1. RISETIME=7ns MAX. INPUTIMPEDANCE=1M . 22pF
2. RISETIME=10ns MAX. SOURCEIMPEDANCE=50
-1.0A
SETTIMEBASE FOR 50/100ns /cm
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