RG4Y Datasheet, PDF (2/2 Pages) Sanken electric – Ultra-Fast-Recovery Rectifier Diodes

Diode Semiconductor Korea
RG4Y(Z)---RG4C(Z)
FIG.1 -- TEST CIRCUIT DIAGRAM AND REVERSE RECOVERY TIME CHARACTERISTIC
50
10
N 1.
N 1.
trr
+0.5A
(+)
25VDC
(approx)
(-)
D.U.T.
1
NONIN-
DUCTIVE
OSCILLOSCOPE
(NOTE 1)
PULSE
GENERATOR
(NOTE2)
0
-0 .2 5 A
-1 .0 A
1cm
NOTES:1.RISE TIME = 7ns MAX.INPUT IMPEDANCE =1M . 22pF. JJJJ
2.RISE TIME =10ns MAX.SOURCE IMPEDANCE=50 .
SET TIMEBASEFOR10/20 ns/cm
FIG.2 -- TYPICAL FORWARD CHARACTERISTIC
RG4Y ^EG01Z
10
RG4
RG4A
1.0
RG4C
TJ=25
Pulse W idth=300 µS
0.1
0.01
0 _{0.4 0.8 1.2 1.6 2.0 2.4 2.8 3.2 3.6} 4
INSTANTANEOUS FORWARD VOLTAGE, VOLTS
FIG.3 -- FORWARD DERATING CURVE
5
Single Phase
RG4Y
Half Wave 60Hz
4
Resistive or
Inductive Load
3
RG4Z,RG4
2
1
RG4A,RG4C
00 _{25 50 75 100 125 150}
AMBIENT TEMPERATURE,
FIG.4 -- PEAK FORWARD SURGE CURRENT
100
8 .3 m s S in g le H alf
S ine-W ave
80
R G 4Y
60
R G 4Z ,R G 4
40
R G 4A
20
R G 4C
01
5
10
50
NUMBER OF CYCLES AT 60Hz
FIG.5--TYPICAL JUNCTION CAPACITANCE
200
RG4Y,RG4Z,RG4
RG4A,RG4C
100
70
50
TJ=25
20
10
0.1 0.2 0.4 1 2 4 10 20 40 100
REVERSE VOLTAGE,VOLTS
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