MUR2005C Datasheet, PDF (2/2 Pages) Diode Semiconductor Korea – SUPER FAST RECTIFIERS

Diode Semiconductor Korea
MUR2005C- - - MUR2060C
FIG.1 -- TEST CIRCUIT DIAGRAM AND REVERSE RECOVERY TIME CHARACTERISTIC
50
10
N 1.
N 1.
(+)
25VDC
(approx)
(-)
D.U.T.
1
NONIN-
DUCTIVE
OSCILLOSCOPE
(NOTE 1)
PULSE
GENERATOR
(NOTE2)
NOTES:1.RISE TIME = 7ns MAX.INPUTIMPEDANCE =1M . 22pF.
JJJJ 2.RISE TIME =10ns MAX.SOURCE IMPEDANCE=50 .
trr
+0.5A
0
-0.25A
-1.0A
1cm
SETTIMEBASEFOR10/20 ns/cm
FIG.2 -- TYPICAL FORWARD CHARACTERISTIC
1000
100
10
1.0
0.1
.4
.6
Tj=25^oC
Pulse Width=300 s
1% Duty Cycle
.8
1.0 1.2 1.4 1.6
1.8
INSTANTANEOUS FORWARD VOLTAGE, VOLTS
FIG.3 -- PEAK FORWARD SURGE CURRENT
125
100
75
50
8.3 m s S in gle H alf S in e W ave
T J= 125
25
01
10
100
NUMBER OF CYCLES AT 60Hz
FIG.4-FOzRWORD DERATING CURVE
12
20
16
12
Single Phase
10
Half Wave 60HZ
Resistive or
Inductive Load
8.0
0
0 25 50 75 100 125 150 175
CASE TEMPERATURE,
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