FR810 Datasheet, PDF (2/2 Pages) Shenzhen Luguang Electronic Technology Co., Ltd – Fast Recovery Rectifiers

Diode Semiconductor Korea
FIG.1 -- FORWARD DERATING CURVE
FR810- - - FR860
FIG.2--PEAK FORWARD SURGE CURRENT
8
7
6
5
4
3
2
Single Phase
Half W ave 60H Z
Resistive or
1
Inductive Load
0
0 25 50 75 100 125 150 175
CASE TEMPERATURE,
FIG.3--TYPICAL JUNCTION CAPACITANCE
200
TJ=125
8.3ms Single Half
Sine-Wave
100
0
1
2 4 8 10 20 40 60 80 100
NUMBER OF CYCLES AT 60 Hz
FIG.4 --TYPICAL FORWARD CHARACTERISTIC
1000
600
400
200
100
40
TJ=25
f=1MHz
20
10
.1 .2 .4
1.0 2 4
10 20 40 100
1000
100
40
20
10
TJ=25
Pulse Width=300µS
4
2
1
0.6
0.4
0.2
0.1
0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0
REVERSE VOLTAGE,VOLTS
INSTANTANEOUS FORWARD VOLTAGE,VOLTS
FIG.5 -- REVERSE RECOVERY TIME CHARACTERISTIC AND TEST CIRCUIT DIAGRAM
50
10
N.1.
N.1.
trr
+0.5A
(+)
50VDC
(APPROX)
(-)
D.U.T.
1
N.1.
OSCILLOSCOPE
(NOTE 1)
(-)
PULSE
GENERATOR
(NOTE2)
(+)
0
-0.25A
NOTES:1.RISETIME=7ns MAX. INPUTIMPEDANCE=1M .22pF
2.RISETIME=10ns MAX. SOURCEIMPEDANCE=5O
-1.0A
1cm
SETTIMEBASEFOR50/100 ns /cm
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