ES2AA Datasheet, PDF (2/2 Pages) Taiwan Semiconductor Company, Ltd – 2.0 AMPS. Super Fast Surface Mount Rectifiers

Diode Semiconductor Korea
ES2AA --- ES2JA
FIG.1 -- TEST CIRCUIT DIAGRAM AND REVERSE RECOVERY TIME CHARACTERISTIC
50
10
N 1.
N 1.
trr
+0.5A
(+)
25VDC
(approx)
(-)
D.U.T.
1
NONIN-
DUCTIVE
OSCILLOSCOPE
(NOTE 1)
PULSE
GENERATOR
(NOTE2)
0
-0.25A
-1.0A
1cm
NOTES:1.RISE TIME = 7ns MAX.INPUT IMPEDANCE = 1M .22pF.
JJJJJ2.RISE TIME =10ns MAX.SOURCE IMPEDANCE=50 .
SET TIME BASE FOR 10/15 ns/cm
FIG.2 -- TYPICAL FORWARD CHARACTERISTIC
100
10
1
0.1
0.01
.4
.6
Tj=25^oC
Pulse Width=300 s
1% Duty Cycle
.8
1.0 1.2 1.4 1.6
1.8
INSTANTANEOUS FORWARD VOLTAGE, VOLTS
FIG.4 -- TYPICAL JUNCTION CAPACITANCE
200
100
60
40
20
10
6
4
TJ=25
2
1
0.1 0.2 0.4 1 2 4
10 20 40 100
REVERSE VOLTAGE,VOLTS
FIG.3 -- FORWARD DERATING CURVE z
2.5
2
1.5
1
Single Phase
Half Wave 60HZ
Resistive or
.5
Inductive Load
0
0 25 50 75 100 125 150 175
AMBIENT TEMPERATURE,
FIG.5 -- PEAK FORWARD SURGE CURRENT
50
40
8.3ms Single Half
Sine-Wave
30
20
10
0
1
5
10
50 100
NUMBER OF CYCLES AT 60Hz
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