ES1F Datasheet, PDF (2/2 Pages) Galaxy Semi-Conductor Holdings Limited – FAST RECOVERY RECTIFIER

Diode Semiconductor Korea
ES1F---ES1A
FIG.1 -- REVERSE RECOVERY TIME CHARACTERISTIC AND TEST CIRCUIT DIAGRAM
50
10
N.1.
N.1.
trr
+0.5A
(+)
50VDC
(APPROX)
(-)
D.U.T.
1
N.1.
OSCILLOSCOPE
(NOTE 1)
(-)
PULSE
GENERATOR
(NOTE2)
(+)
0
-0.25A
-1.0A
NOTES: 1. RISETIME=7ns MAX. INPUTIMPEDANCE=1M . 22PF
1cm
SETTIMEBASEFOR50/100 ns /cm
2. RISETIME=10ns MAX. SOURCEIMPEDANCE=50
FIG.2 -- FORWARD DERATING CURVE
1.0
0.8
ES1F
0.6
ES1Z
ES1
ES1A
0.4
Single Phase
Half Wave 60Hz
0.2
Resistive or
Inductive Load
0
0
25
50
75
100
125
150
AMBIENT TEMPERATURE,
FIG.4-- PEAK FORWARD SURGE CURRENT
FIG.3 -- TYPICAL FORWARD CHARACTERISTIC
100
10
4
2
1.0
TJ=25
Pulse Width=300µS
ES1F~
ES1Z
0.4
0.2
0.1
0.06
0.04
0.02
0.01
ES1~
ES1A
1.0
2.0
3.0 4.0
5.0
INSTANTANEOUS FORWARD CURRENT, VOLTS
FIG.5-- TYPICAL JUNCTION CAPACITANCE
30
20
10
ES1F
ES1Z
ES1
ES1A
01
5
10
50
100
60
40
20
10
4
TJ=25
f=1MHz
2
1
.1 .2 .4
1.0 2 4
10 20 40
100
NUMBER OF CYCLES AT 60Hz
REVERSE VOLTAGE,VOLTS
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