ERD09-13 Datasheet, PDF (2/2 Pages) Galaxy Semi-Conductor Holdings Limited – FAST RECOVERY RECTIFIER

Diode Semiconductor Korea
ERD09-13---ERD09-15
FIG.1 -- REVERSE RECOVERY TIME CHARACTERISTIC AND TEST CIRCUIT DIAGRAM
50
10
N.1.
N.1.
trr
+0.5A
(+)
50VDC
(APPROX)
(-)
D.U.T.
1
N.1.
OSCILLOSCOPE
(NOTE 1)
(-)
PULSE
GENERATOR
(NOTE2)
(+)
0
-0.25A
NOTES:1.RISETIME=7ns MAX. INPUTIMPEDANCE=1M .22pF
2.RISETIME=10ns MAX. SOURCEIMPEDANCE=5O
-1.0A
SETTIMEBASEFOR50/100 ns /cm
1cm
FIG.2 --FORWARD DERATING CURVE
FIG.3 --PEAK FORWARD SURGE CURRENT
3.5
3.0
2.5
2.0 Single Phase
Half Wave 60Hz
1.5
Resistive or
Inductive Load
1.0
0.5
00
20 40 60 80 100 120 140
80
70
60
50
40
30
20
10
0
1
TJ =125
8.3ms Single Half
Sine-Wave
2
4
8 10 20 40 60 80 100
AMBIENT TEMPERATURE,
NUMBER OF CYCLES AT 60 Hz
FIG.4--TYPICAL FORWARD CHARACTERISTIC
100
10
4
2
1.0
0.4
0.2
0.1
0.06
0.04
0.02
TJ=25
Pulse Width=300µS
0.01
0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0
INSTANTANEOUS FORWARD VOLTAGE,VOLTS
FIG.5--TYPCAL JUNCTION CAPACITANCE
100
60
40
20
10
4
TJ=25
f=1MHz
2
1
.1 .2 .4
1.0 2 4
10 20 40 100
REVERSE VOLTAGE,VOLTS
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