ERC30-01 Datasheet, PDF (2/2 Pages) Galaxy Semi-Conductor Holdings Limited – HIGH EFFICIENCY RECTIFIER

Diode Semiconductor Korea
ERC30-01 -- ERC30-02
FIG.1 --TEST CIRCUIT DIAGRAM AND REVERSE RECOVERY TIME CHARACTERISTIC
50
10
N 1.
N 1.
trr
+0.5A
(+)
25VDC
(approx)
(-)
D.U.T.
1
NONIN-
DUCTIVE
OSCILLOSCOPE
(NOTE 1)
(+)
PULSE
GENERATOR
(NOTE2)
(-)
NOTES:1.RISETIME=7ns MAX.INPUT IMPEDANCE=1MΩ.22pF
2.RISETIME=10ns MAX.SOURCEIMPEDANCE=50Ω.
FIG.2 --FORWARD DERATING CURVE
0
-0.25A
-1.0A
1cm
SET TIMEBASEFOR20/30 ns/cm
FIG.3--TYPICAL JUNCTION CAPACITANCE
1.5
1.0
Single Phase
Half Wave 60Hz
Resistive or
Inductive Load
0.5
0
0 20 40 60 80 100 120 140 150
200
100
60
40
20
10
4
TJ=25
2
1
0.1 0.2 0.4 1 2
4
10 20 40
AMBIENT TEMPERATURE.
REVERSE VOLTAGE,VOLTS
FIG.4--PEAK FORWARD SURGE CURRENT
100
90
80
70
60
50
40
30
20
10
0
TJ=25
8.3ms Single Half
Sine-Wave
50
100 150
200
250
NUMBER OF CYCLES AT 60Hz
FIG.5 -- TYPICAL FORWARD CHARACTERISTIC
100
10
TJ=25
Pulse Width=300µS
1.0
0.1
0.04
0.01 _{0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 2}
INSTANTANEOUS FORWARD VOLTAGE,VOLTS
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