ERC25-04 Datasheet, PDF (2/2 Pages) Galaxy Semi-Conductor Holdings Limited – FAST RECOVERY RECTIFIER

Diode Semiconductor Korea
ERC25-04---ERC25-06
FIG.1 -- REVERSE RECOVERY TINE CHARACTERISTIC AND TEST CIRCUIT DIAGRAM
50
10
N.1.
N.1.
trr
+0.5A
(+)
50VDC
(APPROX)
(-)
D.U.T.
1
N.1.
OSCILLOSCOPE
(NOTE 1)
(-)
PULSE
GENERATOR
(NOTE2)
(+)
NOTES:1.RISETIME=7ns MAX. INPUTIMPEDANCE=1M .22pF
2.RISETIME=10ns MAX. SOURCEIMPEDANCE=5O
0
-0.25A
-1.0A
1cm
SETTIMEBASEFOR50/100 ns /cm
FIG.2 --TYPICAL FORWARD CHARACTERISTIC
10
2.0
1.4
TJ=25
Pulse Width=300uS
1.2
1.0
0.1
0.04
0
0.6 0.7 0.9 1.1 1.3 1.5 1.7 1.9
INSTANTANEOUS FORWARD VOLTAGE,VOLTS
FIG.3 -- FORWARD DERATING CURVE
1 .4
1 .2
1 .0
0 .8
Single Phase
Half W ave 60Hz
0 .6
R esistive or
Inductive Load
0 .4
0 .2
0
0
20 40 60 80 100 120 140
AMBIENT TEMPERATURE,
FIG.4--TYPICAL JUNCTION CAPACITANCE
100
60
40
20
10
4
TJ=25
f=1MHz
2
1
.1 .2 .4
1.0 2 4
10 20 40 100
REVERSE VOLTAGE,VOLTS
FIG.5--PEAK FORWARD SURGE CURRENT
80
70
60
50
40
30
20
10
0
1
TJ=125
8.3ms Single Half
Sine-Wave
2
4
8 10 20
40 60 80 100
NUMBER OF CYCLES AT 60 Hz
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