ERC20-02 Datasheet, PDF (2/2 Pages) Diode Semiconductor Korea – FAST RECOVER Y RECTIFIER DIODES

Diode Semiconductor Korea
ERC20 - 02 - - - ERC20 - 08
FIG.1 -- REVERSE RECOVERY TIME CHARACTERISTIC AND TEST CIRCUIT DIAGRAM
50
10
N.1.
N.1.
trr
+0.5A
(+)
50VDC
(APPROX)
(-)
D.U.T.
1
N.1.
OSCILLOSCOPE
(NOTE 1)
(-)
PULSE
GENERATOR
(NOTE2)
(+)
0
-0.25A
-1.0A
NOTES:1.RISETIME=7ns MAX. INPUTIMPEDANCE=1M .22pF
2.RISE TIME=10ns MAX. SOURCE IMPEDANCE=5O
1cm
SETTIMEBASEFOR50/100 ns /cm
FIG.2 --FORWARD DERATING CURVE
FIG.3 --PEAK FORWARD SURGE CURRENT
6.0
Single Phase
Half Wave 60HZ
Resistive or
5.0
Inductive Load
4.0
3.0
2.0
1.0
0
0 20 40 60 80 100 120 140 160 180 200
70
56
42
28
14
0
1
TJ=125
8.3ms Single Half
Sine-Wave
10
100
CASE TEMPERATURE,
NUMBER OF CYCLES AT 60 Hz
FIG.4--TYPICAL FORWARD CHARACTERISTIC
10
4.0
2.0
ERC20-02-ERC20-04
1.0
ERC20-06-ERC20-08
0.4
0.2
0.1
0.04
0.02
0.01
0
TJ=25
Pulse Width=300µs
0.4 0.8 1.2 1.6 2.0 2.4
INSTANTANEOUS FORWARD VOLTAGE,VOLTS
FIG. 5 - TYPICAL REVERSE CHARACTERISTICS
1000
500
100
50
TJ = 100
10
5
TJ = 25
1
0 20 40 60 80 100 120 140
PERCENT OF RATED PEAK REVERSE VOLTAGE, (%)
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