ERC01-02 Datasheet, PDF (2/2 Pages) Galaxy Semi-Conductor Holdings Limited – PLASTIC SILICON RECTIFIER

Diode Semiconductor Korea
ERC01-02---ERC01-10
FIG.1 -- FORWARD CHARACTERISTIC
100
10
TJ=25
Pulse Width=300uS
4
2
1.0
0.4
0.1
0.04
0.01
0.6 0.8 1.0 1.2 1.4 1.6 1.8 2 . 0
INSTANTANEOUS FORWARD VOLTAGE,VOLTS
FIG.2 -- JUNCTION CHARACTERISTICS
100
60
40
20
10
4
TJ=25
f=1MHz
2
1
.1 .2 .4 1.0 2 4
100
REVERSE VOLTAGE,VOLTS
FIG.3 --CURRENT DERATING CURVE
1.5
1.25
1
0.75
0.5
Single Phase
Half Wave 60H Z
Resistive or
Inductive Load
0.25
0
25
50
75 100
125
150 175
AMBIENT TEMPERATURE,
FIG.4 --PEAK FORWARD SURGE CURRENT
160
140
120
100
80
60
40
20
0
1
2
4
TJ=125
8.3ms Single Half
Sine-Wave
8 10
20
40 60 80 100
NUMBER OF CYCLES AT 60Hz
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