ERB32-01 Datasheet, PDF (2/2 Pages) Galaxy Semi-Conductor Holdings Limited – HIGH EFFICIENCY RECTIFIER

Diode Semiconductor Korea
ERB32-01 -- ERB32-02
FIG.1--TEST CIRCUIT DIAGRAM AND REVERSE RECOVERY TIME CHARACTERISTIC
50
10
N 1.
N 1.
(+)
25VDC
(approx)
(-)
D.U.T.
1
NONIN-
DUCTIVE
OSCILLOSCOPE
(NOTE 1)
+0.5A
(+)
PULSE
GENERATOR
(NOTE2)
0
-0.25A
(-)
-1.0A
trr
1cm
NOTES:1.RISETIME=7ns MAX.INPUT IMPEDANCE=1MΩ.22pF
2.RISE TIME=10ns MAX.SOURCE IMPEDANCE=50Ω.
FIG.2 --FORWARD DERATING CURVE
SET TIME BASE FOR 20/30 ns/cm
FIG.3--TYPICAL JUNCTION CAPACITANCE
1.4
1.2
1
0.8 Single Phase
Half Wave 60Hz
0.6
Resistive or
Inductive Load
0.4
0.2
0
0 20 40 60 80 100 120 140 150
AMBIENT TEMPERATURE.
FIG.4--PEAK FORWARD SURGE CURRENT
80
70
TJ=125
60
8.3ms Single Half
Sine-Wave
50
40
30
20
10
0
1
2
4
8 10 20 40 60 80 100
NUMBER OF CYCLES AT 60Hz
200
100
60
40
20
10
4
TJ=25
2
1
0.1 0.2 0.4 1 2
4
10 20 40 100
REVERSE VOLTAGE,VOLTS
FIG.5 -- TYPICAL FORWARD CHARACTERISTIC
10
1.0
TJ=25
0.1
Pulse Width=300µS
0.01
0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2
INSTANTANEOUS FORWARD VOLTAGE, VOLTS
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