ER101 Datasheet, PDF (2/2 Pages) Galaxy Semi-Conductor Holdings Limited – SUPER FAST RECTIFIER

Diode Semiconductor Korea
ER101 --- ER106
FIG.1 -- TEST CIRCUIT DIAGRAM AND REVERSE RECOVERY TIME CHARACTERISTIC
50
10
N 1.
N 1.
(+)
25VDC
(approx)
(-)
D.U.T.
1
NONIN-
DUCTIVE
OSCILLOSCOPE
(NOTE 1)
PULSE
GENERATOR
(NOTE2)
NOTES:1.RISE TIME = 7ns MAX.INPUT IMPEDANCE = 1M .22pF.
JJJJJ2.RISE TIME =10ns MAX.SOURCE IMPEDANCE=50 .
trr
+0.5A
0
-0.25A
-1.0A
1cm
SET TIME BASE FOR 10/20 ns/cm
FIG.2 -- TYPICAL FORWARD CHARACTERISTIC
2.0
1.0 ^{ER101 - ER102}
ER103 -
ER104
ER106
0.1
0 . 0 10
TJ=25
Pulse W idth=300µs
0.4 0.8 1.2 1.6 2.0 2.4
INSTANTANEOUS FORWARD VOLTAGE, VOLTS
FIG.3 -- FORWARD DERATING CURVE z
1.0
0.5
0
0
Single Phase
Half Wave 60HZ
Resistive or
Inductive Load
0.375"(9.5mm)Lead length
25 50 75 100 125 150 175
AMBIENT TEMPERATURE,
FIG.4 -- TYPICAL JUNCTION CAPACITANCE
100
60
40
20
10
6
4
2
TJ=25
f=1.0MHz
1
0.1 0.2 0.4 1 2 4 10 20 40 100
REVERSE VOLTAGE,VOLTS
FIG.6 -- TYPICAL REVERSE CHARACTERISTICS
1000
TJ=100
100
10
TJ=75
FIG.5 -- PEAK FORWARD SURGE CURRENT
30
25
8.3ms Single Half
Sine-Wave
20
15
10
5
0
1
5
10 20
50 100
NUMBER OF CYCLES AT 60Hz
1.0
TJ=25
0.1
0 20 40 60 80 100 120
PERCENT OF RATED PEAK REVERSE VOLTAGE.
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