BYD33DZ Datasheet, PDF (2/2 Pages) Diode Semiconductor Korea – FAST RECOVERY RECTIFIERS

Diode Semiconductor Korea
BYD33D(Z)---BYD33M(Z)
FIG.1 -- REVERSE RECOVERY TIME CHARACTERISTIC AND TEST CIRCUIT DIAGRAM
50
10
N.1.
N.1.
trr
+0.5A
(+)
50VDC
(APPROX)
(-)
D.U.T.
1
N.1.
OSCILLOSCOPE
(NOTE 1)
(-)
PULSE
GENERATOR
(NOTE2)
(+)
0
-0.25A
NOTES:1.RISETIME=7ns MAX. INPUTIMPEDANCE=1M .22pF
2.RISETIME=10ns MAX. SOURCEIMPEDANCE=5O
-1.0A
1cm
SETTIMEBASEFOR50/100 ns /cm
FIG.2 --FORWARD DERATING CURVE
FIG.3 --PEAK FORWARD SURGE CURRENT
1.5
1.0
0.5
Single Phase
Half Wave 60HZ
Resistive or
Inductive Load
0.1
0.05
0.01
0.005
0 20 40 60 80 100 120 140 160 180 200
25
20
15
10
5
1
1
TJ=125
8.3ms Single Half
Sine-Wave
10
100
AMBIENT TEMPERATURE,
FIG.4--TYPICAL FORWARD CHARACTERISTIC
100
10
4
2
1.0
TJ=25
Pulse Width=300µS
0.4
0.2
0.1
0.06
0.02
0.01
0.6 0.8
1.0 1.2
1.4 1.6 1.8 2.0
INSTANTANEOUS FORWARD VOLTAGE,VOLTS
NUMBER OF CYCLES AT 60 Hz
FIG.5--TYPICAL JUNCTION CAPACITANCE
200
100
60
40
20
10
6
4
TJ=25
f=1MHz
2
1
0.1 0.2 0.4 1 2
4 10 20 40 100
REVERSE VOLTAGE ,VOLTS
www.diode.kr