BY448Z Datasheet, PDF (2/2 Pages) Diode Semiconductor Korea – FAST RECOVERY RECTIFIER

Diode Semiconductor Korea
BY448(Z)
FIG.1 -- REVERSE RECOVERY TIME CHARACTERISTIC AND TEST CIRCUIT DIAGRAM
50
10
N.1.
N.1.
(+)
50VDC
(APPROX)
(-)
D.U.T.
1
N.1.
OSCILLOSCOPE
(NOTE 1)
(-)
PULSE
GENERATOR
(NOTE2)
(+)
NOTES:1.RISETIME=7ns MAX. INPUTIMPEDANCE=1M .22pF
2.RISETIME=10ns MAX. SOURCEIMPEDANCE=5O
trr
+0.5A
0
-0.25A
-1.0A
1cm
SETTIMEBASEFOR50/100 ns /cm
FIG.2 --TYPICAL FORWARD CHARACTERISTIC
FIG.3 -- FORWARD DERATING CURVE
100
10
4
2
1.0
0.4
0.2
0.1
0.06
0.04
0.02
0.01
0.6 0.8
1.0 1.2
TJ=25
Pulse Width=300µS
1.4 1.6 1.8 2.0
3
2.5
Single Phase
Half Wave 60HZ
2
Resistive or
Inductive Load
1.5
1
0.5
0
25 50
75 100 125 150 175 200
INSTANTANEOUS FORWARD VOLTAGE,VOLTS
AMBIENT TEMPERATURE,
FIG.4--TYPICAL JUNCTION CAPACITANCE
100
60
40
20
10
4
TJ=25
f=1MHz
2
1
.1 .2 .4
1.0 2 4
10 20 40
100
REVERSE VOLTAGE,VOLTS
FIG.5--PEAK FORWARD SURGE CURRENT
30
20
TJ=125
8.3ms Single Half
Sine-Wave
10
0
1
10
100
NUMBER OF CYCLES AT 60 Hz
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