BY328Z5A Datasheet, PDF (2/2 Pages) Diode Semiconductor Korea – FAST RECOVERY RECTIFIER

Diode Semiconductor Korea
BY328
FIG.1 -- REVERSE RECOVERY TIME CHARACTERISTIC AND TEST CIRCUIT DIAGRAM
50
10
N.1.
N.1.
trr
+0.5A
(+)
50VDC
(APPROX)
(-)
D.U.T.
1
N.1.
OSCILLOSCOPE
(NOTE 1)
(-)
PULSE
GENERATOR
(NOTE2)
(+)
NOTES:1.RISETIME=7ns MAX. INPUTIMPEDANCE=1M .22pF
2.RISETIME=10ns MAX. SOURCEIMPEDANCE=5O
0
-0.25A
-1.0A
1cm
SETTIMEBASEFOR200 ns /cm
FIG.2 --TYPICAL FORWARD CHARACTERISTIC
FIG.3 -- FORWARD DERATING CURVE
100
10
4
2
1.0
0.4
0.2
0.1
0.06
0.04
TJ=25
Pulse Width=300uS
0.02
0.01
0.8 1.0 1.2 1.4 1.6 1.8
INSTANTANEOUS FORWARD VOLTAGE,VOLTS
FIG.4--TYPICAL JUNCTION CAPACITANCE
200
100
60
40
20
10
6
4
TJ=25
2
f=1MHz
1
.1 .2 .4
1.0 2
4 10
20 40 100
REVERSE VOLTAGE,VOLTS
6.0
5.0
Single Phase
Half Wave 60HZ
4.0
Resistive or
Inductive Load
3.0
2.0
1.0
0
25
50
75 100 125 150 175 200
AMBIENT TEMPERATURE,
FIG.5--PEAK FORWARD SURGE CURRENT
60
TJ=125
45
8.3ms Single Half
Sine-Wave
30
15
0
1
2
4
8 10 20
40 60 80 100
NUMBER OF CYCLES AT 60 Hz
www.diode.kr