BAS85 Datasheet, PDF (2/2 Pages) NXP Semiconductors – Schottky barrier diode

Diode Semiconductor Korea
BAS85
FIG.1-- ADMISSIBLEPOWERDISSIPATIONVS. AMBIENT
TEMPERATURE
200
100
0
100
200
T_A- Ambient temperature( )
FIG. 2--TYPICAL INSTANTANEOUS FORWORD
CHARACTERISTICS
1000
100
10
TJ=125
T J=25
1
T J = -4 0
0 .1
0 .0 1
0
0.2 0.4 0.6 0.8 1.0 1.2
V_F - Forward Voltage ( V )
FIG. 3 -- TYPICAL REVERSE CHARACTERISTICS
1000
100
10
1
0 .1
T J= 1 2 5
100
75
50
25
0 .01
0 5 10 15 20 25 30
V_R - Reverse voltage ( V )
FIG.4 -- TYPICAL JUNCTION CAPACITANCE
14
12
10
8
6
4
2
0
5 10 15 20 25 30
V_R - Reverse voltage ( V )
www.diode.kr