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| BAS40T Datasheet, PDF (2/3 Pages) Diodes Incorporated – SURFACE MOUNT SCHOTTKY BARRIER DIODE | |||
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Diode Semiconductor Korea
Surface Mount Schottky Barrier Diode BAS40T/-04T/-05T/-06T
ELECTRICAL CHARACTERISTICS @ Ta=25â unless otherwise specified
Parameter
Symbol Test conditions
MIN MAX
Reverse breakdown voltage V(BR)R
IR=10μA
40
Leakage current
IR
Forward voltage
VF
Typical total capacitance
CT
Reverse recovery Time
trr
VR=30V
IF=1.0mA,tp<300μS
IF=40mA,tp<300μS
VR=0V,f=1MHz
IF=IR=10mA,Irr=0.1*IR,RL=100â¦
200
380
1000
5.0
5.0
TYPICAL CHARACTERISTICS @ Ta=25â unless otherwise specified
UNIT
V
nA
mV
pF
ns
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