1H1G Datasheet, PDF (2/2 Pages) GOOD-ARK Electronics – Glass Passivated High Efficient Rectifiers

Diode Semiconductor Korea
1H1G - - - 1H8G
FIG.1 -- TEST CIRCUIT DIAGRAM AND REVERSE RECOVERY TIME CHARACTERISTIC
50
10
N 1.
N 1.
(+)
25VDC
(approx)
(-)
D.U.T.
1
NONIN-
DUCTIVE
OSCILLOSCOPE
(NOTE 1)
PULSE
GENERATOR
(NOTE2)
trr
+0.5A
0
-0.25A
-1.0A
1cm
NOTES:1.RISE TIME = 7ns MAX.INPUT IMPEDANCE = 1M .22pF.
JJJJJ2.RISE TIME =10ns MAX.SOURCE IMPEDANCE=50 .
SET TIME BASE FOR 20/30 ns/cm
FIG.2 -- TYPICAL FORWARD CHARACTERISTIC
1H1G-1H3G
10
1H6G-1H8G
1.0
1H4G-1H5G
TJ=25
Pulse Width=300µS
0.1
0.01
0 0.4 0.8 1.2 1.6 2.0 2.4 2.8 3.2 3.6 4.0
INSTANTANEOUS FORWARD VOLTAGE, VOLTS
FIG.4 -- TYPICAL JUNCTION CAPACITANCE
200
100
60
40
1H1G-1H5G
20
10
6
1H6G-1H8G
4
TJ=25
2
1
0.1 0.2 0.4 1 2
4 10 20 40 100
REVERSE VOLTAGE,VOLTS
FIG.3 -- FORWARD DERATING CURVE
1.0
0.75
0.5
0.25
Single Phase
Half Wave 60HZ
Resistive or
Inductive Load
0
25 50 75 100 125 150 175
AMBIENT TEMPERATURE,
FIG.5 -- PEAK FORWARD SURGE CURRENT
30
24
18
TJ=125
8.3ms Single Half
Sine-Wave
12
6
0
12
4
10
20
40
100
NUMBER OF CYCLES AT 60Hz
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