US3AB Datasheet, PDF (1/2 Pages) PACELEADER INDUSTRIAL – SURFACE MOUNT REVERSE VOLTAGE 50 TO 1000 VOLTS

Diode Semiconductor Korea US 3 AB---US 3 MB
SURFACE MOUNT RECTIFIERS
FEATURES
Plastic package has Underwriters Laboratories
vvvvvFlam mability Classification 94V-0
For surface mount applications
Low profile package
Eas y pick and place
Ultrafas t recovery tim es for high efficiency
Low forward voltage,low power loss
Built-in strain relief,ideal for autom ated placem ent
High temperature soldering:
111 250oC/10 seconds on terminals
1111REVERSE VOLTAGE: 50 - 1000 V
FORWARD CURRENT: 3.0 A
DO-214AA(SMB)
4 . 5± 0.1 5
5 . 3± 0.2
MECHANICAL DATA
Cas e:JEDEC DO-214AA,m olded plas tic body over
111 passivated chip
Term inals:Solder Plated, solderable per MIL-STD-750,
1111Method 2026
Polarity: Color band denotes cathode end
Weight: 0.003 ounces, 0.093 gram
1.25± 0.2
0.2± 0.05
Dimensions in millimeters
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25^oC ambient tem perature unless otherwise specified
Device marking code
Maximum repetitive peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
Maximum average forw ard rectified current at
T_L=110^OC
Peak forw ard surge current 8.3ms single half-
sine-w ave superimposed on rated load(JEDEC
Method)
V_RRM
V_RWS
V_DC
I_F(AV)
I_FSM
US3AB US3BB US3DB US3GB US3JB US3KB US3MB
UNITS
US3AB US3BB US3DB US3GB US3JB US3KB US3MB
50
100
200 400 600 800 1000
V
35
70
140 280 420 560 700
V
50
100
200 400 600 800 1000
V
3.0
A
100.0
A
Maximum instantaneous forw ard voltage at 3A
V_F
1.0
1.7
V
Maximum DC reverse current @T_A=25^oC
I_R
at rated DC blockjing voltage
@T_A=125^oC
Maximum reverse recovery time at I_F=0.5A
I_R=1.0A I_rr=0.25A
t_rr
Typical junction capacitance at 4.0V,1MH_Z
C_J
10.0
A
500
50
75
ns
70
50
pF
Maximum thermal resistance (NOTE1)
R
25
o_C/W
Operating temperature range
T_J
Storage temperature range
T_STG
NOTE: 1.P.C.B.mounted on 0.2X0.2"(5.0X5.0mm)copper pad area
-55--------+150
-55--------+150
o_C
o_C
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