US1AB Datasheet, PDF (1/2 Pages) Shanghai Sunrise Electronics – SURFACE MOUNT ULTRA FAST SWITCHING RECTIFIER

Diode Semiconductor Korea
US1A B---US1M B
SURFACE MOUNT RECTIFIERS
REVERSE VOLTAGE: 50 - 1000 V
FORWARD CURRENT: 1.0 A
FEATURES
Plastic package has underwriters laboratories
vvvvvflam mability classification 94V-0
For surface mount applications
Glass passivated chip junctions
Low profile package
Eas y pick and place
Ultrafas t recovery tim es for high efficiency
Low forward voltage,low power loss
Built-in strain relief,ideal for autom ated placem ent
High temperature soldering:
111 250^oC/10 seconds on terminals
MECHANICAL DATA
Cas e:JEDEC SMB,m olded plas tic body over
passivated chip
Term inals:Solder Plated, solderable per MIL-STD-750,
1111Method 2026
Polarity: Color band denotes cathode end
Weight: 0.003 ounces, 0.093 gram
SMB
4 . 5± 0.1 5
5 . 3± 0.2
1.25± 0.2
0.2± 0.05
Dimensions in millimeters
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25^oC ambient tem perature unless otherwise specified
Device marking code
Maximum repetitive peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
Maximum average forw ard rectified current at
T_L=110^OC
Peak forw ard surge current 8.3ms single half-
sine-w ave superimposed on rated load(JEDEC
Method)
V_RRM
V_RWS
V_DC
I_F(AV)
I_FSM
US1AB US1BB US1DB US1GB US1JB US1KB US1MB
UNITS
US1AB US1BB US1DB US1GB US1JB US1KB US1MB
50
100
200 400 600 800 1000
V
35
70
140 280 420 560 700
V
50
100
200 400 600 800 1000
V
1.0
A
30.0
A
Maximum instantaneous f orward voltage at1.0A V_F
1.0
1.7
V
Maximum DC reverse current @T_A=25^oC
at rated DC blockjing voltage
@T_A=125^oC
Maximum reverse recovery time at I_F=0.5A
I_R=1.0A I_rr=0.25A
Typical junction capacitance at 4.0V,1MH_Z
Maximum thermal resistance (NOTE1)
Operating temperature range
I_R
t_rr
C_J
R _JA
R _JL
T_J
Storage temperature range
T_STG
NOTE: 1.P.C.B.mounted on 0.2X0.2"(5.0X5.0mm) copper pad area
5.0
100.0
50
20
55
20
-55------- +150
-55------- +150
75
ns
15
pF
o_C/W
o_C
o_C
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