UF810 Datasheet, PDF (1/2 Pages) Microsemi Corporation – ULTRA FAST RECOVERY RECTIFIER

Diode Semiconductor Korea
UF810 --- UF880
ULTRA FAST RECTIFIERS
VOLTAGE RANGE: 100 --- 800 V
CURRENT: 8.0A
FEATURES
Metal-Semiconductor junction with guard ring
Epitaxial construction
Low forward voltage drop,low switching losses
High surge capability
For us e in low voltage,high frequency inverters free
xxxx wheeling,and polarity protection applications
The plastic material carries U/L recognition 94V-O
MECHANICAL DATA
Case:JEDEC TO--220AC,molded plastic
Terminals:Solderable per
MIL- STD-750,Method 2026
Polarity: As marked
Weight: 0.064 ounces,1.96 gram
Mounting position: Any
TO - 220AC
10.2± 0.2
3.8± 0.15
4.5± 0.2
1.4± 0.2
PIN
1
2
2.6± 0.2
0.9± 0.1
5.0± 0.1
0.5± 0.1
Dimensions in millimeters
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25 ambient temperature unless otherwise specified.
Single phas e,half wave,60 Hz,res is tive or inductive load. For capacitive load,derate by 20%.
UF810 UF820 UF830 UF840 UF860 UF880 UNITS
Maximum recurrent peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
Maximum average forw ard rectified current
(see fig.1)
Peak forw ard surge current
8.3ms single half -sine-w ave
superimposed on rated load @T_J=125
Maximum instantaneous forw ard voltage
@ 8.0A (Note 1)
V_RRM
V_RMS
V_DC
I_F(AV)
I_FSM
V_F
Maximum reverse current
@T_A=25
at rated DC blocking voltage @T_A=100
Typical thermal resistance (Note 2)
Maximum reverse recovery time (Note 3)
Operating junction temperature range
I_R
R _θJA
t_rr
T_J
Storage temperature range
T_STG
NOTE: 1. Pulse test:300us pulse width,1% duty cycle.
2.Thermal resistance junction to ambient
3.Reverse recovery test conditions:I_F=0.5A,I_R=1A,I_rr=0.25A
100
200
70
140
100
200
1.0
300
400
210
280
300
400
8.0
125
1.3
10
500
60
50
-55 ---- + 150
- 55 ---- +150
600
800
V
420
560
V
600
800
V
A
A
1.7
V
µA
/W
100
ns
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