UF1010 Datasheet, PDF (1/2 Pages) Diode Semiconductor Korea – ULTRA FAST RECTIFIER

Diode Semiconductor Korea
UF1010- - - UF1080
ULTRA FAST RECTIFIERS
VOLTAGE RANGE: 100 --- 800 V
CURRENT: 10 A
FEATURES
Low cost
Diffusde junction
Glass passivated chip junction
Low forward voltage drop
High current capability
Easily cleaned with freon, alcohol,Isopropanol
z and similar solvents
The plastic material carries U/L recognition 94V-0
MECHANICAL DATA
Case:JEDEC TO-220AC
Terminals: Solderable per
MIL- STD-202,Method 208
Polarity: As marked
Weight: 0.064 ounces,1.81 gram
Mounting position: Any
TO-220AC
10.2± 0.2
3.8± 0.15
4.5± 0.2
1.4± 0.2
PIN
1
2
0.9± 0.1
5.0± 0.1
2.6± 0.2
0.5± 0.1
Dimensions in millimeters
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25 ambient temperature unless otherwise specified.
Single phase,half wave,60 Hz,resistive or inductive load. For capacitive load,derate by 20%.
UF
1010
UF
1020
Maximum recurrent peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
V_RRM
100
V_RMS
70
V_DC
100
Maximumaverage forw ard rectified current
@T_C=100
Peak forw ard surge current
I_F(AV)
8.3ms single half-sine-w ave
I_FSM
superimposed on rated load @T_J=125
Maximuminstantaneous forw ard voltage
@ 10A
V_F
Maximum reverse current
@T_A=25
I_R
at rated DC blocking voltage @T_A=125
Maximum reverse recovery time (Note1)
t_rr
Typical junction capacitance (Note2)
C_J
Typical thermal resistance
(Note3)
R_θJA
Operating junction temperature range
T_J
Storage temperature range
T_STG
NOTE: 1. Measured with I_F=0.5A, I_R=1A, I_rr=0.25A.
2. Measured at 1.0MH_Z and applied rev erse v oltage of 4.0V DC.
3.Thermal resistance junction to ambient
200
140
200
1.0
UF
1030
300
210
300
UF
1040
400
280
400
10
UF
1060
600
420
600
UF
1080
800
560
800
UNITS
V
V
V
A
150
1.3
10
500
50
80
60
- 55 ----- + 150
- 55 ----- + 150
A
1.7
V
A
100
ns
50
pF
/W
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