TVR4J Datasheet, PDF (1/2 Pages) Toshiba Semiconductor – TOSHIBA Fast Recovery Diode Silicon Diffused Type High Speed Rectifier Applications (fast recovery)

Diode Semiconductor Korea
TVR4J - - - TVR4N
FAST RECOVERY RECT IFIERS
VOLTAGE RANGE: 600 ---1000 V
CURRENT: 1.5 A
FEATURES
Low cost
Diffus ed junction
Low leakage
Low forward voltage drop
High current capability
Eas ily cleaned with Freon,Alcohol,Is opropanol
and s im ilar s olvents
The plas tic m aterial carries U/L recognition 94V-0
MECHANICAL DATA
Cas e:JEDEC DO-15,m olded plas tic
Term inals : Axial lead ,s olderable per
MIL- STD-202,Method 208
Polarity: Color band denotes cathode
Weight: 0.014 ounces ,0.39 gram s
Mounting pos ition: Any
DO - 15
Dimensions in millimeters
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25 am bient tem perature unles s otherwis e s pecified.
Single phas e,half wave,60 Hz,res is tive or inductive load. For capacitive load,derate by 20%.
Maximum recurrent peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
Maximum average f orw ard rectif ied current
9.5mm lead length,
@T_A=75
Peak f orw ard surge current
V_RRM
V _{R MS}
V_DC
I_{F (AV)}
8.3ms single half -sine-w ave
superimposed on rated load
I_{F SM}
Maximum instantaneous f orw ard voltage
@ 1.5 A
V_F
Maximum reverse current
@T_A=25
I_R
at rated DC blocking voltage @T_A=100
Maximum reverse recovery time (Note1)
t_rr
Typical junction capacitance (Note2)
C_J
Typical thermal resistance
(Note3)
R_θJA
Operating junction temperature range
T_J
Storage temperature range
T_STG
N OTE:1. Measured with I_F=0.5A, I_R=1A, I_rr=0.25A.
2. Measured at 1.0MHz and applied rev erse v oltage of 4.0V DC.
3. Therm al resistance f rom junction to am bient.
TV R4J
600
420
600
TV R4N
1000
700
1000
1.5
50.0
1.3
5.0
1 0 0 .0
1000
20
40
-55----+150
-55----+150
UNITS
V
V
V
A
A
V
A
ns
pF
/W
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