SS8050W Datasheet, PDF (1/4 Pages) Galaxy Semi-Conductor Holdings Limited – Silicon Epitaxial Planar Transistor

Diode Semiconductor Korea
Silicon Epitaxial Planar Transistor
SS8050W
FEATURES
z Collector Current.(I_C= 1.5A）
z Complementary To SS8550W.
Pb
Lead-free
z Collector dissipation:P_C=200mW(T_C=25℃)
APPLICATIONS
z High Collector Current.
ORDERING INFORMATION
Type No.
Marking
SS8050W
Y1
SOT-323
Package Code
SOT-323
MAXIMUM RATING @ Ta=25℃ unless otherwise specified
Symbol
Parameter
Ratings
V_CBO
Collector-Base Voltage
40
V_CEO
Collector-Emitter Voltage
25
V_EBO
Emitter-Base Voltage
6
I_C
Collector Current -Continuous
1.5
P_C
Collector Dissipation
200
T_j,T_stg
Junction and Storage Temperature
-55~150
Units
V
V
V
A
mW
℃
ELECTRICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified
Parameter
Symbol Test conditions
MIN _MAX
Collector-base breakdown voltage _{V(BR)CBO IC=100μA,IE=0}
40
Collector-emitter breakdown voltage _{V(BR)CEO IC=2mA,IB=0}
25
Emitter-base breakdown voltage
V_(BR)EBO I_E=-100μA,I_C=0
5
Collector cut-off current
I_CBO
V_CB=40V,I_E=0
0.1
Collector cut-off current
I_CEO
V_CE=20V,I_B=0
0.1
Emitter cut-off current
I_EBO
V_EB=5V,I_C=0
0.1
UNIT
V
V
V
μA
μA
μA
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