SS52C Datasheet, PDF (1/2 Pages) Galaxy Semi-Conductor Holdings Limited – SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS

Diode Semiconductor Korea
SS52C - - - SS510C
SURFACE MOUNT SCHOTTKY
BARRIER RECTIFIERS
REVERSE VOLTAGE: 20 --- 100 V
CURRENT: 5.0 A
FEATURES
Plastic package has Underwriters Laborator
111 Flammability Classification 94V-0
For surface mounted applications
Low profile package
Built-in strain relief
Metal silicon junction, majority carrier conduction
High surge capability
High current capability,low forward voltage drop
Low power loss,high effciency
For use in low voltage high frequency inverters,free
111 wheeling and polarity protection applications
Guardring for overvoltage protection
High temperature soldering guaranteed:250^oC/10 1
11 seconds at terminals
MECHANICAL DATA
Case:JEDEC SMC,molded plastic over
1111passivated chip
Terminals:Solder Plated, solderable per MIL-STD-750,
1111Method 2026
Polarity: Color band denotes cathode end
Weight: 0.007 ounces, 0.21 gram
SMC
6.9± 0.25
7.8± 0. 2
1. 3± 0. 25
0.25± 0.06
Dimensions in millimeters
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25^oC ambient temperature unless otherwise specified
SS52C SS53C SS54C SS55C SS56C SS58C SS59C SS510C ^UNITS
Maximum recurrent peak reverse voltage
V_RRM
20
30
40
Maximum RMS voltage
V_RWS
14
21
28
Maximum DC blocking voltage
V _DC
20
30
40
Maximum average forw ord rectified current at
c T_L(SEE FIG.1) (NOTE 2)
I_(AV)
Peak forw ard surge current 8.3ms single half-
c sine-w ave superimposed on rated load(JEDEC I_FSM
c Method)
Maximum instantaneous forw ard voltage at
v 5.0A(NOTE.1)
V_F
0.55
Maximum DC reverse current @T_A=25^oC
I_R
at rated DC blockjing voltage(NOTE1) @T_A=100^oC
20
Typical thermal resitance (NOTE2)
R _JA
R _JL
Operating junction temperature range
T_J
Storage temperature range
T_STG
NOTE: 1.Pulse test:300 S pulse width,1%duty cy cle
2. P.C.B.mounted with 0.55"X0.55"(14.0X14.0mm²)copper pad areas
50
60
80
90 100
V
35
42
56
63 70
V
50
60
80
90 100
V
5.0
A
175
A
0.70
0.5
55
17
-55--- +150
-55--- +150
0.85
V
mA
10
o_C/W
o_C
o_C
www.diode.kr