SR360P Datasheet, PDF (1/2 Pages) Diode Semiconductor Korea – SCHOTTKY BARRIER RECTIFIER

Diode Semiconductor Korea
SR360P
SCHOTTKY BARRIER RECTIFIER
VOLTAGE RANGE: 60 V
CURRENT: 3.0 A
FEATURES
Metal-Semiconductor junction with guard ring
Epitaxial construction
Low forward voltage drop,low switching losses
High surge capability
For us e in low voltage,high frequency inverters free
xxxx wheeling,and polarity protection applications
The plastic m aterial carries U/L recognition 94V-0
MECHANICAL DATA
Case:JEDEC DO--27,molded plastic
Terminals: Axial lead ,solderable per
MIL- STD-202,Method 208
Polarity: Color band denotes cathode
Weight: 0.041 unces,1.15 grams
Mounting position: Any
DO - 27
Dimensions in millimeters
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25 am bient temperature unless otherwise specified.
Single phas e,half wave,50 Hz,res istive or inductive load. For capacitive load,derate by 20%.
Maximum recurrent peak reverse voltage
Non repetitive peak reverse voltage
V_RRM
V_RSM
Maximum average forw ard
rectified current
9.5mm lead length
Peak forw ard surge current
10ms single half-sine-w ave
superimposed on rated load
Maximum instantaneous f orw ard
voltage @ 3.0A (Note1)
Maximum reverse current
at rated DC blocking voltage @T_j=25
Typical thermal resistance
Operating junction temperature range
I_F(AV)
I_FSM
V_F
I_R
R_θJA
T_J
Storage temperature range
Note: 1. Pulse test : 300 s pulse width,1% duty cy cle.
T_STG
SR360P
60
65
3.0
80
0.58
2.5
62
- 55 ---- + 150
- 55 ---- + 150
UNITS
V
V
A
A
V
mA
̼W
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