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SM4933 Datasheet, PDF (1/2 Pages) Rectron Semiconductor – SURFACE MOUNT GLASS PASSIVATED FAST RECOVERY SILICON RECTIFIER (VOLTAGE RANGE 50 to 600 Volts CURRENT 1.0 Ampere)
Diode Semiconductor Korea
SM4933 - - - SM4937
SURFACE MOUNT RECTIFIERS
FEATURES
Glass passivated device
Ideal for surface mounted applications
Low leakage
Low forward voltage drop
High current capability
Easily cleaned with Alcohol,Isopropnol
and similar solvents
The plastic material carries U/L
recognition 94V-0
MECHANICAL DATA
Case: JEDEC DO-213AB,molded plastic
Terminals: Solderable per MIL- STD-202,
Method 208
Polarity: Color band denotes cathode
Weight: 0.0046 ounces, 0.116 grams
Mounting position: Any
VOLTAGE RANGE: 50 --- 600 V
CURRENT: 1.0 A
DO-213AB
SOLDERABLE ENDS
D2=D1
Đ0
Ē0.20
D2
0.5± 0.1
4.9± 0.2
0.5± 0.1
Dimensions in millimeters
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25 ambient temperature unless otherwise specified.
Single phase,half wave,60 Hz,resistive or inductive load. For capacitive load,derate current by 20%.
SM4933 SM4934 SM4935 SM4936 SM4937 UNITS
Maximum recurrent peak reverse voltage
VRRM
50
100
200
400
Maximum RMS voltage
VRMS
35
70
140
280
Maximum DC blocking voltage
VDC
50
100
200
400
Maximum average forward rectified current
@TA=55
I(AV)
1.0
Peak forward surge current
8.3ms single half-sine-wave
IFSM
30
superimposed on rated load
Maximum instantaneous forward voltage
@1.0A
VF
1.2
Maximum reverse current
@TA=25
at rated DC blocking voltage @TA=125
IR
5.0
100
Maximum reverse recovery time (Note1)
trr
200
Typical junction capacitance (Note2)
Cj
15
Maximum thermal resistance (Note3)
Maximum thermal resistance (Note4)
Operating junction temperature range
R θJL
R θJA
Tj
30
75
-55 --- + 150
Storage temperature range
TSTG
-55 --- + 150
NOTE:
1. Test conditions:IF=1.0A,VR=30V.
2. Measured at 1.0MHz and applied reverse voltage of 4.0V DC.
3. Thermal resistance junction to terminal 6.0mm 2 copper pads to each terminal.
4. Thermal resistance junction to ambient 6.0mm 2 copper pads to each terminal.
600
V
420
V
600
V
A
A
V
µA
ns
pF
/W
/W
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